A MECHANISM FOR HYDROGEN-RELATED TRANSIENT EFFECTS IN CARBON-DOPED ALGAAS GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS/

Authors
CHI JY LU K
Citation
Jy. Chi et K. Lu, A MECHANISM FOR HYDROGEN-RELATED TRANSIENT EFFECTS IN CARBON-DOPED ALGAAS GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS/, IEEE electron device letters, 19(11), 1998, pp. 408-410
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
19
Issue
11
Year of publication
1998
Pages
408 - 410
Database
ISI
SICI code
0741-3106(1998)19:11<408:AMFHTE>2.0.ZU;2-D
Abstract
The transient phenomenon in carbon-doped AlGaAs/GaAs ABT's has been fo und to reoccur after a brief thermal annealing under no bias. The temp erature and the current dependencies have been studied,vith HBT's made with MOCVD grown wafers. The experimental data can he explained by a model based on thermal decomposition of C-H complexes during annealing and electron captures by hydrogen ions under minority-carrier injecti on.