HYDROGEN PASSIVATION OF THE BE ACCEPTOR IN P-INP (100)

Be is the preferred acceptor dopant for InP in beam epitaxial systems. We show that the carrier concentration of Be-doped InP (100) can be c ompensated by more than four orders of magnitude by diffusion of atomi c hydrogen generated by an electron cyclotron resonance plasma source. Capacitance-voltage depth profiling shows effective compensation of t he carriers within the first 0.4 mu m from the surface. The dissociati on energy of the Be-H complex is determined from the reactivation kine tics of the passivated Be acceptor in a back-to-back Schottky diode. T he significantly large dissociation energy of 2.57 eV found here sugge sts the use of hydrogenation as an alternative isolation technique. (C ) 1998 Published by Elsevier Science B.V. All rights reserved.