GROWTH OF ZINC-SULFIDE THIN-FILMS ON (100)SI WITH THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION METHOD STUDIED BY ATOMIC-FORCE MICROSCOPY

Authors
VALKONEN MP LINDROOS S RESCH R LESKELA M FRIEDBACHER G GRASSERBAUER M
Citation
Mp. Valkonen et al., GROWTH OF ZINC-SULFIDE THIN-FILMS ON (100)SI WITH THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION METHOD STUDIED BY ATOMIC-FORCE MICROSCOPY, Applied surface science, 136(1-2), 1998, pp. 131-136
Citations number
24
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
136
Issue
1-2
Year of publication
1998
Pages
131 - 136
Database
ISI
SICI code
0169-4332(1998)136:1-2<131:GOZTO(>2.0.ZU;2-8
Abstract
Zinc sulfide (ZnS) thin films were grown on (100)Si substrates from so lution with the successive ionic layer adsorption and reaction (SILAR) method. Aqueous solutions of ZnCl2 and Na2S were used as precursors. The morphological development of the films with increasing number of S ILAR cycles was monitored ex situ by atomic force microscopy (AFM) ope rated in tapping mode. Their roughness increased vs. the growth cycles . AFM studies on (100)Si substrates treated with Na2S solution reveale d that the dissolution of the silicon substrates is a process competin g with the thin film growth and has to be considered when interpreting the AFM images. (C) 1998 Elsevier Science B.V. All rights reserved.