HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY EVIDENCE FOR ELECTRON-BEAM-INDUCED DECOMPOSITION OF TRIMETHYLSILANE ADSORBED ON SI(100)

The effects of incident electrons on trimethylsilane ((CH3)(3)SiH) ads orbed onto Si(100) at 110 K are examined using high-resolution electro n energy loss spectroscopy (HREELS) and temperature programmed desorpt ion (TPD). TPD from trimethylsilane-covered Si(100) show hydrogen deso rption from silicon monohydride states at 780 K (beta(1)); at high tri methylsilane exposures, two low-temperature (130 K and 155 K) molecula r TPD states appear. The absence of silicon dihydride species on the t rimethylsilane covered Si(100) surface was demonstrated by comparing t he data obtained from this surface with that obtained from disilane-co vered Si(100). HREELS and TPD data indicate that carbon deposition on Si(100) is enhanced by irradiating the trimethylsilane covered surface only when the molecular states are present. (C) 1998 Elsevier Science B.V. All rights reserved.