DOPING AND PHOTOELECTRIC PROPERTIES OF C-60 FILMS PREPARED BY IONIZEDCLUSTER BEAM DEPOSITION

We prepared C-60 films by means of ionized cluster beam (ICB) depositi on. X-ray diffraction (XRD) measurement showed the C-60 films to be po lycrystalline. The films show negative resistance-temperature coeffici ents, and their room-temperature resistivity is greater than 10(2) Ome ga cm. The films were implanted with 80-keV phosphorus, BBr3, Ar, and He ions, under doses ranging up to 10(16) cm(-2). The resistivity of t he implanted films decreases with increasing doses. n-type electrical conduction was observed for phosphorus-implanted C-60 films. The inter action of impinging ions with C-60 clusters was found to force the C-6 0 molecules to disintegrate and the films to amorphize. p-type conduct ion was observed for the C-60 films doped with aluminum by simultaneou sly sputtering aluminum during deposition. C-60/Si structures show het erojunction characteristics that can be influenced by Light illuminati on. The photoelectric properties of the films were found to be improve d by doping with aluminum.