ELECTRICAL-PROPERTIES OF AU-POLYSTYRENE-AU SUBMICRON STRUCTURES

Citation
K. Efimenko et al., ELECTRICAL-PROPERTIES OF AU-POLYSTYRENE-AU SUBMICRON STRUCTURES, Applied physics A: Materials science & processing, 67(5), 1998, pp. 503-505
Citations number
13
Categorie Soggetti
Physics, Applied
ISSN journal
09478396
Volume
67
Issue
5
Year of publication
1998
Pages
503 - 505
Database
ISI
SICI code
0947-8396(1998)67:5<503:EOASS>2.0.ZU;2-1
Abstract
Electrical forming and voltage-current characteristics of Au-polystyre ne-Au (MIM) structures created on a glassy substrate were studied. Pol ystyrene (PS) isolating films, 180-800nm thick, were prepared by spinn ing from a solution. It was shown that the electroforming of MIM struc tures occurs at the voltage of 6-6.5 V and that the shaping rate depen ds on the insulator thickness, temperature, and the shaping time. The voltage-current characteristics exhibit a region with ohmic behaviour and, above a certain voltage, a region with effective negative resista nce. The negative resistance is explained by deterioration of conducti ve Au filaments at higher voltages. The voltage decrease does not resu lt in a complete recovery of all filaments.