A HIGH-GAIN POROUS SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTOR THROUGH RAPID THERMAL-OXIDATION AND RAPID THERMAL ANNEALING

Authors
LEE MK TSENG YC CHU CH
Citation
Mk. Lee et al., A HIGH-GAIN POROUS SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTOR THROUGH RAPID THERMAL-OXIDATION AND RAPID THERMAL ANNEALING, Applied physics A: Materials science & processing, 67(5), 1998, pp. 541-543
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
67
Issue
5
Year of publication
1998
Pages
541 - 543
Database
ISI
SICI code
0947-8396(1998)67:5<541:AHPSMP>2.0.ZU;2-L
Abstract
A high-gain porous silicon planar metal-semiconductor-metal photodetec tor is developed through rapid thermal oxidation. The photo currents a re 15.91mA under the illumination of a 24-mW/cm(2) tungsten lamp at 1. 83 mA excited by a 0.85-mW 675-nm laser diode. We also demonstrate tha t the dark current could be greatly reduced through rapid thermal oxid ation and rapid thermal annealing.