Films with a thickness of about 150-1500 nm are deposited on ceramic s
ubstrates in Ar, N-2, air and Ar + O-2 (30%) atmospheres using the cat
hodic sputtering technique. The formation of chromium oxides and nitri
des in the films during reactive deposition is confirmed by X-ray diff
raction investigations. The temperature-dependent electrical resistivi
ty is measured in the temperature range of 4-500 K, and the temperatur
e coefficient of resistivity 1/rho x (d rho/dT) is determined. The var
iations in electrical properties of the films are compared with the va
riations in structure and chemical composition, and it is shown that t
he greatest resistance with TCR dose to zero can be obtained in films
containing granules with metallic and non-metallic conductivity. (C) 1
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