EMISSION PROPERTIES OF A TM3-GDVO4 MICROCHIP LASER AT 1.9 MU-M()

GdVO4 as a host for thulium has several advantages for diode pumping i n comparison with other crystals. The absorption cross section of thul ium in GdVO4 is considerably stronger and broader than in YAG and YLF and the spectrum is shifted closer to the emission wavelength of comme rcially available AlGaAs laser diodes. In our paper, we report on the temporal and spectral emission properties of a monolithical Tm3+ (6.9 at. %):GdVO4 microchip laser at 1.9 mu m The laser can be adjusted to emit either cw or in an oscillating regime. Slope efficiencies up to 4 7% are achieved. This value exceeds the Stokes limit of 42%.