ELECTRONIC-STRUCTURE OF THE GAAS(001)2X4 AND GAAS(110) SURFACES STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY

Authors
ARCIPRETE F PATELLA F BALZAROTTI A FANFONI M MOTTA N SGARLATA A BOSELLI A ONIDA G SHKREBTII AI DELSOLE R
Citation
F. Arciprete et al., ELECTRONIC-STRUCTURE OF THE GAAS(001)2X4 AND GAAS(110) SURFACES STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Physical review. B, Condensed matter, 58(16), 1998, pp. 10139-10142
Citations number
34
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
16
Year of publication
1998
Pages
10139 - 10142
Database
ISI
SICI code
0163-1829(1998)58:16<10139:EOTGAG>2.0.ZU;2-X
Abstract
We compare, by high-resolution electron-energy-loss spectroscopy (HREE LS), the electronic structure of the GaAs(110)1x1 surface and that of the GaAs(001)2x4 As-rich surface in the energy-loss region 0.5-5 eV. T he HREEL spectra are interpreted in terms of realistic calculations. T he spectral features above the gap are assigned to electronic transiti ons involving surface and/or bulk states. Losses at energies within th e gap are associated to defect states at the surface. [S0163-1829(98)5 1236-2].