Doping the Kondo insulator FeSi with Al at the Si site introduces carr
iers and eventually yields metallic conduction. The lattice constant,
thermoelectric effect, Hall effect, electrical conductivity, magnetic
susceptibility, specific heat, and magnetoresistance have been measure
d over the 0<x<0.08 range of Al concentration. All of these quantities
show a systematic variation with x including a metal-insulator transi
tion for carrier densities between 2.2x10(20) and 4.4x10(20) cm(-3). A
detailed analysis of the transport and thermodynamic properties revea
l a metal-insulator transition closely resembling that of the classic
semiconductors (Si:P, Si:B, and Ge:Sb) with one important exception: a
substantially enhanced carrier mass. [S0163-1829(98)11439-X].