COMPENSATING LEVELS IN P-TYPE ZNSE-N STUDIED BY OPTICAL DEEP-LEVEL TRANSIENT SPECTROSCOPY

Compensating levels in p-type ZnSe:N were studied by optical deep-leve l transient spectroscopy (ODLTS). A donor level was detect-ed electric ally. Toe activation energy of the donor level was determined to be 56 +/- 5 meV from the thermal emission process of trapped electrons. The energy position of the donor level was also detected by a photoexcita tion process of electrons from the valence band to the donor level. Th e concentration of the donor level was estimated from the height of th e ODLTS peak to be about 21% of the total incorporated N atoms. This i s much greater than the concentration of a hole trap detected in the s ame sample. The donor level is concluded to be the most important fact or in the compensation process in ZnSe:N. [S0163-1829(98)06839-8].