AB-INITIO CALCULATIONS OF SOFT-X-RAY EMISSION FROM SI(100) LAYERS BURIED IN GAAS

Authors
MANKEFORS S NILSSON PO KANSKI J KARLSSON K
Citation
S. Mankefors et al., AB-INITIO CALCULATIONS OF SOFT-X-RAY EMISSION FROM SI(100) LAYERS BURIED IN GAAS, Physical review. B, Condensed matter, 58(16), 1998, pp. 10551-10556
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
16
Year of publication
1998
Pages
10551 - 10556
Database
ISI
SICI code
0163-1829(1998)58:16<10551:ACOSEF>2.0.ZU;2-2
Abstract
Calculations of soft-x-ray emission spectra from Si(100) layers buried in GaAs are reported. The local densities of states for Si in As and Ga sites are found to be very different. By comparison with experiment al data, this difference allows us to determine the relative amounts o f Si in the two types of sites. In the case of a single Si layer we fi nd that 63 (+/- 5)% of the buried atoms are in Ga sites. [S0163-1829(9 8)11139-6].