OPTICAL CHARACTERIZATION OF POROUS SILICON EMBEDDED WITH CDSE NANOPARTICLES

Arrays of a few nanometer-size clusters have been realized using a por ous silicon (PS) matrix by filling its pores with CdSe. The photolumin escence (PS) peak from the embedded area of the PS samples with differ ent luminescence stabilizes at 1.79 eV. This has been interpreted as d ue to emission from the CdSe clusters with an average size of about 3- 5 nm. Likewise, the PL and Raman scattering spectra of the pure PS are a of the samples have been compared with those obtained from the embed ded areas. PL spectra were examined as a function of laser irradiation . Finally, to analyze the possibility of the formation of metal/porous semiconductor contacts, cross-section structures have been observed b y scanning electron microscopy in the electron-beam-induced current mo de. (C) 1998 American Institute of Physics. [S0003-6951(98)00445-8].