TRANSFER OF PATTERNED ION-CUT SILICON LAYERS

The technique of transferring patterned ion-cut layers from one Si waf er to another was demonstrated. The starting silicon wafer was masked with checkerboard and line patterns with a 3 mm thick polymethylmethac rylate/photoresist and was implanted with 5 x 10(16) H+ ions/cm(2) at 150 keV. After stripping off the mask, the wafer was bonded to an oxid e-coated receptor wafer through low-temperature direct wafer bonding. Heat treatment of this bonded pair showed that the hydrogen- induced s ilicon surface layer cleavage (ion cut) could propagate throughout abo ut 16 mu m x 16 mu m of nonimplanted material with implanted regions o nly 4 mu m wide. Mask width, mm spacing, and implantation profiles thr ough the mask shape were shown to have effects on the internal microfr acturing mechanisms. (C) 1998 American Institute of Physics. [S0003-69 51(98)00645-7].