RESISTIVE AND STRUCTURAL-PROPERTIES OF LA1.85SR0.15CU1-YZNYO4 FILMS

Single-phase c-axis aligned La1.85Sr0.15Cu1-yZnyO4 films were grown by pulsed laser deposition with Zn contents up to a value of y of 0.12. The film properties indicate the existence of defects, in addition to the Zn impurities, that are unintentionally introduced during the film growth. These defects are probably oxygen vacancies, and have a disti nctly different effect on T-c from the Zn. The separation of the two e ffects resolves earlier ambiguities in the observed rates of T-c depre ssion. (C) 1998 American Institute of Physics. [S0003-6951(98)02445-0] .