HOT-ELECTRON EMISSION LITHOGRAPHY

We have developed an electron lithography method, hot electron emissio n lithography, which is capable of printing integrated circuits with a n exposure time of only a few seconds. The basic design and fabricatio n of the patterned electron emitting mask made by standard metal-oxide -semiconductor technology will be discussed, and its applicability in a simple 1:1 e-beam stepper will be demonstrated. Patterns with a mini mum feature size of 160 nm have been printed successfully. Further imp rovements in resolution to 50 nm appear to be possible. (C) 1998 Ameri can Institute of Physics. [S0003-6951(98)04645-2].