Effective pyroelectric coefficients as large as 5 mu C/cm(2) degrees C
, with peak responsivities at approximately 50 degrees C, were obtaine
d from compositionally graded barium strontium titanate ferroelectric
thin film devices formed on silicon using unbalanced magnetron sputter
deposition. These effective pyroelectric coefficients are nearly two
orders of magnitude larger than those observed from conventional pyroe
lectric thin film ferroelectric detectors. (C) 1998 American Institute
of Physics. [S0003-6951(98)04245-4].