ELECTROPHOTOGRAPHIC PHOTORECEPTORS INCLUDING SELENIUM-BASED MULTILAYERS

Citation
D. Nesheva et al., ELECTROPHOTOGRAPHIC PHOTORECEPTORS INCLUDING SELENIUM-BASED MULTILAYERS, Semiconductor science and technology, 12(5), 1997, pp. 595-599
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
12
Issue
5
Year of publication
1997
Pages
595 - 599
Database
ISI
SICI code
0268-1242(1997)12:5<595:EPISM>2.0.ZU;2-R
Abstract
Multilayer amorphous selenium-based photoreceptors were prepared by th ermal evaporation in a vacuum at 6 x 10(-4) Pa. Amorphous multilayers of Se/CdSe, Se/Se93Te7 as well as a combination of a Se87Te13 thin fil m and Se/Se87Te13 multilayers were used as photogeneration layers. 'Pu re' Se or Se95Te5 were the transport layers. The xerographic propertie s of the photoreceptors were studied and some peculiarities of the cha rge transport in different designed photoreceptors are discussed. Xero graphic photosensitivity at illumination with different wevelengths wa s determined and a comparison with the sensitivity of conventional pho toreceptors is made. All photoreceptors are photosensitive in the whol e visible region. The photoreceptors including Se87Te13 are also sensi tive in the near-infrared region. The xerographic properties of the st udied photoreceptors remained unaltered in air at room temperature for more than 12 months.