D. Nesheva et al., ELECTROPHOTOGRAPHIC PHOTORECEPTORS INCLUDING SELENIUM-BASED MULTILAYERS, Semiconductor science and technology, 12(5), 1997, pp. 595-599
Multilayer amorphous selenium-based photoreceptors were prepared by th
ermal evaporation in a vacuum at 6 x 10(-4) Pa. Amorphous multilayers
of Se/CdSe, Se/Se93Te7 as well as a combination of a Se87Te13 thin fil
m and Se/Se87Te13 multilayers were used as photogeneration layers. 'Pu
re' Se or Se95Te5 were the transport layers. The xerographic propertie
s of the photoreceptors were studied and some peculiarities of the cha
rge transport in different designed photoreceptors are discussed. Xero
graphic photosensitivity at illumination with different wevelengths wa
s determined and a comparison with the sensitivity of conventional pho
toreceptors is made. All photoreceptors are photosensitive in the whol
e visible region. The photoreceptors including Se87Te13 are also sensi
tive in the near-infrared region. The xerographic properties of the st
udied photoreceptors remained unaltered in air at room temperature for
more than 12 months.