ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS

Capacitance spectroscopy was used to investigate the properties of Au/ GaAs Schottky barriers in structures in which a thin layer of gallium arsenide grown at low temperature (LT-GaAs) and containing As clusters was sandwiched between two uniformly copper-doped layers of n-GaAs gr own at standard temperatures. We detected electron accumulation in the LT-GaAs layer surrounded by two depletion regions in the adjacent n-G aAs layers. Emission of electrons from the LT-GaAs layer at 300 K resu lts in an extended plateau in the capacitance-voltage characteristic. It is found that the presence of the 0.1 mu m thick LT-GaAs layer sand wiched between the two much thicker n-GaAs layers results in an increa se in the breakdown electric field to values as high as 230 kV/cm, whi ch is much higher than typical values for standard Au/n-GaAs structure s. (C) 1998 American Institute of Physics. [S1063-7826(98)00510-9].