A NEW RECOMBINATION CENTER IN HEAVILY-DOPED GAAS ZN GROWN BY LIQUID-PHASE EPITAXY

Authors
ZHURAVLEV KS SHAMIRZAEV TS YAKUSHEVA NA PETRENKO IP
Citation
Ks. Zhuravlev et al., A NEW RECOMBINATION CENTER IN HEAVILY-DOPED GAAS ZN GROWN BY LIQUID-PHASE EPITAXY, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1057-1061
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
10
Year of publication
1998
Pages
1057 - 1061
Database
ISI
SICI code
1063-7826(1998)32:10<1057:ANRCIH>2.0.ZU;2-U
Abstract
The photoluminescence properties of p-GaAs : Zn (100) layers grown by liquid-phase epitaxy from gallium and bismuth melts at various tempera tures have been studied. It is shown that a novel radiative recombinat ion center is formed in these layers. The concentration of the centers increases with the doping level in proportion to the concentration of free holes raised to the power 5.35 +/- 0.1. The exponent is independ ent of the growth melt (gallium or bismuth! and the growth temperature . It is found that the center is a neutral complex consisting of an an tisite defect of gallium at an arsenic site and two arsenic vacancies. (C) 1998 American Institute of Physics. [S1063-7826(98)00810-2].