EFFECT OF IN DOPING ON THE KINETIC COEFFICIENTS IN SOLID-SOLUTIONS OFTHE SYSTEM (PBZSN1-Z)(0.95)GE0.05TE

In the quaternary solid solutions (PbzSn1-z)(0.95)Ge0.05Te (z = 0.35 a nd 0.40) the effect of addition of indium (in amounts of 5-20 at. %) o n the temperature dependence of the electrical conductivity sigma, Hal l coefficient R, Seebeck coefficient S, and Hall mobility u is investi gated on samples prepared using powder technology. We found a monotoni c dependence of the hole density p on the indium content N-In with a t endency toward saturation at a level p(max) approximate to 3 x 10(21) cm(-3), an abrupt drop in the mobility in samples with p approximate t o p(max), and changes in the character of the temperature dependences R(T) and sigma(T). We show that these peculiarities in the behavior of the kinetic coefficients can be interpreted in terms of quasilocal in dium impurity states against the background of the valence band spectr um (with energy epsilon(In) similar to 0.3 eV) and resonance hole scat tering into these states. (C) 1998 American Institute of Physics. [S10 63-7826(98)00910-7].