OPTOELECTRONIC PHENOMENA IN GAAS AND GAP LAYERS PREPARED BY NITROGEN TREATMENT

Plasma processing of single-crystal wafers of gallium arsenide and gal lium phosphide is employed to obtain thin wideband layers. The spectra l dependence of the photoluminescence of the layers and of the photose nsitivity of the corresponding layer/substrate structures is investiga ted. An analysis of the results of these studies gives us reason to be lieve that the described process leads to replacement of arsenic and p hosphorus atoms by nitrogen and to the formation of wideband layers of solid solutions on the surface of the indicated semiconductors. (C) 1 998 American Institute of Physics. [S1063-7826(98)01310-6].