PHOTOELECTRIC PROPERTIES OF GAN GAP HETEROSTRUCTURES/

Thin interference layers of n-GaN were grown on n- and p-type GaP subs trates with (100) and (111) orientations by vapor phase epitaxy in an open chloride system. Photosensitivity spectra of isotypic and anisoty pic heterojunctions under linear polarized light from the side of the wideband component (GaN) at oblique incidence were investigated. Induc ed polarized photosensitivity was observed, and peculiarities of this photosensitivity caused by interference in the GaN layers are discusse d. (C) 1998 American Institute of Physics. [S1063-7826(98)01410-0].