LONG-TERM STRUCTURAL RELAXATION AND PHOTOINDUCED DEGRADATION IN A-SI-H

Authors
KOUGIA KV PEVTSOV AB
Citation
Kv. Kougia et Ab. Pevtsov, LONG-TERM STRUCTURAL RELAXATION AND PHOTOINDUCED DEGRADATION IN A-SI-H, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1128-1130
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
10
Year of publication
1998
Pages
1128 - 1130
Database
ISI
SICI code
1063-7826(1998)32:10<1128:LSRAPD>2.0.ZU;2-M
Abstract
The effect of heating-illumination cycling on the electrical propertie s of a-Si :H fabricated in a glow discharge was investigated. Comparis on of experimental and theoretical results shows that photostimulated degradation of a-Si:H (the Staebler-Wronski effect) may occur due to l ong-term degradation of structural defects generated by preliminary he ating. (C) 1998 American Institute of Physics. [S1063-7826(98)02510-1] .