HETEROGENEITY AND PHOTOCONDUCTIVITY KINETICS IN AMORPHOUS HYDROGENATED SILICON

Authors
KOUGIA KV TERUKOV EI FUS V
Citation
Kv. Kougia et al., HETEROGENEITY AND PHOTOCONDUCTIVITY KINETICS IN AMORPHOUS HYDROGENATED SILICON, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1131-1133
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
10
Year of publication
1998
Pages
1131 - 1133
Database
ISI
SICI code
1063-7826(1998)32:10<1131:HAPKIA>2.0.ZU;2-Z
Abstract
A model of the decay kinetics of photoconductivity in amorphous hydrog enated silicon, in which recombination of excess carriers is assumed t o occur via tunnelling, is proposed. It is shown that study of the dec ay shape after flash illumination can be a very effective way to detec t structural inhomogeneities in amorphous or disordered semiconductors . (C) 1998 American Institute of Physics. [S1063-7826(98)02610-6].