RELAXATION OF PHOTOINDUCED METASTABLE STATES IN A-SI-H FILMS DEPOSITED AT HIGH-TEMPERATURES

Authors
KUROVA IA ORMONT NN GOLIKOVA OA KAZANIN MM
Citation
Ia. Kurova et al., RELAXATION OF PHOTOINDUCED METASTABLE STATES IN A-SI-H FILMS DEPOSITED AT HIGH-TEMPERATURES, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1134-1136
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
10
Year of publication
1998
Pages
1134 - 1136
Database
ISI
SICI code
1063-7826(1998)32:10<1134:ROPMSI>2.0.ZU;2-E
Abstract
The results of an experimental study of dark-conductivity kinetics in a-Si:H after short-term and long-term illumination, are presented. The films were deposited at temperatures in the range T-s = 300-390 degre es C. Data on relaxation of the photoinduced metastable states were fo und to correlate with the Fermi-level position. (C) 1998 American Inst itute of Physics. [S1063-7826(98)02710-0].