MICROSTRUCTURE OF ELECTRON-BEAM-EVAPORATED EPITAXIAL YTTRIA-STABILIZED ZIRCONIA CEO2 BILAYERS ON BIAXIALLY TEXTURED NI TAPE/

Transmission and scanning electron microscopy, atomic force microscopy , X-ray pole figure analysis and Auger electron spectroscopy were used to characterize the microstructure and surface topography of epitaxia l yttria-stabilized zirconia (YSZ) and CeO2 thin films deposited by el ectron beam evaporation on rolling-assisted biaxially textured Ni subs trates (RABiTS(TM)). The as-deposited YSZ layer is composed of highly crystallographically aligned, slab-shaped columnar grains with sharply defined, rectangular cross sections and average dimensions of 10 nm b y 50 nm by the film thickness. The faces of the YSZ slabs lie on the { 110} planes that contain the surface normal. Their caps are roof-shape d with a peak-to-valley height of about 10 nm and a RMS roughness, mea sured by atomic force microscopy, of 1.3 nm. The resultant surface mor phology is rough, but shows a regular, cross-hatched pattern on the le ngth scale of about 10 nm. The length scale and crystallographic direc tionality of the YSZ microstructure is retained when YBa2Cu3O7-delta i s pulsed laser deposited on it, but the YSZ columns appear to have sin tered into a less angular, more distinctly porous microstructure. The CeO2 layer also is columnar, but appears to be denser, with a flatter, less directional surface topography. Auger sputtering-depth profiling experiments revealed that the compositions of both films are constant through the film thickness and that interdiffusion along the surface normal is not extensive. (C) 1998 Published by Elsevier Science B.V. A ll rights reserved.