LASER MELTING OF NITRIDES OF ALUMINUM, SI LICON, AND BORON

Authors
Citation
Iy. Boretspervak, LASER MELTING OF NITRIDES OF ALUMINUM, SI LICON, AND BORON, Kvantovaa elektronika, 24(3), 1997, pp. 265-268
Citations number
15
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
03687147
Volume
24
Issue
3
Year of publication
1997
Pages
265 - 268
Database
ISI
SICI code
0368-7147(1997)24:3<265:LMONOA>2.0.ZU;2-P
Abstract
An analysis is made of the heating and melting of the surfaces of cera mic samples of aluminium nitride, silicon nitride, and boron nitride b y low-intensity laser radiation. It is shown that the thickness of a m olten surface layer is governed by the thermophysical properties of th e material and by the relationship between its melting point and the i ntense-evaporation temperature. The derived dependence of the thicknes s of the molten layer on the radiation intensity is compared with the results of experiments on melting of aluminium nitride. The published experimental results on the laser heating of silicon nitride and boron nitride are interpreted.