J. Koike et al., THERMAL CYCLING FATIGUE AND DEFORMATION MECHANISM IN ALUMINUM-ALLOY THIN-FILMS ON SILICON, Journal of materials research, 13(11), 1998, pp. 3256-3264
Thermal cycling was performed between room temperature and 723 K in a
sputter deposited thin film of Al-l mol % Si alloy on a silicon substr
ate. After given numbers of cycling, residual stress was determined at
room temperature by measuring the film curvature using a laser deflec
tion apparatus. Residual stress was found to increase with increasing
the cycle number up to the 4th cycle, followed by a continuous decreas
e by further cycling. Based on the microstructure observation, the ini
tial increase of residual stress was caused by the increase of lattice
dislocations and their tangling. The following decrease of residual s
tress was caused by crack formation and delamination. Stress relaxatio
n experiments were also performed during isothermal annealing at vario
us temperatures. Analysis of the relaxation curves indicates three tem
perature regions representing different deformation mechanisms. The bo
undaries between the neighboring regions were found to agree with the
boundaries in a deformation mechanism map calculated for an Al thin fi
lm. Based on the obtained knowledge of the deformation mechanisms, the
origin of the microstructure changes and the structural failure by th
ermal cycling are discussed.