ITINERANT F-ELECTRON ANTIFERROMAGNETISM IN UGA3

Citation
D. Kaczorowski et al., ITINERANT F-ELECTRON ANTIFERROMAGNETISM IN UGA3, Physica. B, Condensed matter, 230, 1997, pp. 35-38
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
230
Year of publication
1997
Pages
35 - 38
Database
ISI
SICI code
0921-4526(1997)230:<35:IFAIU>2.0.ZU;2-4
Abstract
Single crystals of the antiferromagnetic compound UGa3 were studied by means of pressure dependent electrical resistivity measurements. The Neel temperature was found to decrease with rising pressure at the rat e of -1.4 K/bar. A rapid reduction of T-N was also observed in the ele ctrical resistivity studies of the pseudobinary system U(Ga1-xGex)(3), where the substitution for Ga of a smaller atom was equivalent to a p ositive chemical pressure. The results corroborate an itinerant-electr on nature of the magnetism in UGa3 which was suggested before on the b asis of the peculiar magnetic and thermodynamic properties of this com pound.