Single crystals of the antiferromagnetic compound UGa3 were studied by
means of pressure dependent electrical resistivity measurements. The
Neel temperature was found to decrease with rising pressure at the rat
e of -1.4 K/bar. A rapid reduction of T-N was also observed in the ele
ctrical resistivity studies of the pseudobinary system U(Ga1-xGex)(3),
where the substitution for Ga of a smaller atom was equivalent to a p
ositive chemical pressure. The results corroborate an itinerant-electr
on nature of the magnetism in UGa3 which was suggested before on the b
asis of the peculiar magnetic and thermodynamic properties of this com
pound.