H. Marquet et al., DETERMINATION OF THE FACTORS CONTROLLING THE OPTICAL BACKGROUND ABSORPTION IN NOMINALLY UNDOPED AND DOPED SILLENITES, Optical materials, 11(1), 1998, pp. 53-65
We investigated the background absorption spectrum of undoped and dope
d crystals within the BMO family (Bi12MO20, M = Ge, Si, Ti). Dopants w
ere Al, Fe, Cu, Cu/V, and Cr. Many of the observed effects are consist
ent with the antisite Bi-M absorption centre model and the derived pre
dictions. The absorption level primarily depends on the presence of ne
utral BiM centres. Their density in undoped material is determined by
the nature of M. The effect of added chemical impurities is either to
reduce or to enlarge the absorption coefficient. Concerning the influe
nce of dopants, important factors are the valence state, their ability
to take different valences, their concentration, their solubility, th
e symmetry of the occupied site, and magnitude and spectral dependence
of their absorption cross section. Doping of EGO with Cu and V highly
shifts the optical absorption towards the red and IR region. (C) 1998
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