STRUCTURAL AND ELECTRICAL-PROPERTIES OF YBA2CU3O7-X FILMS PREPARED ON(110) SRTIO3 SINGLE-CRYSTALS OR BUFFER LAYERS

The structural and electrical properties of YBa2Cu3O7-x (YBCO) thin fi lms grown on (110) planes of SrTiO3 (STO) by magnetron sputtering were studied. The growth of (103) YBCO films on (110) STO single layer cry stal substrate is compared to the growth of (103) YBCO on STO buffer l ayers deposited by rf sputtering on a YSZ/(100)Si substrate. More pred ominant growth of the (103) oriented grains on STO buffer layers is co nsidered a consequence of the small domain structure of the STO/YSZ bu ffer layer and lateral dynamics of the growth mechanism during the dep osition of YBCO. (103) YBCO films have the c-axis 45 degrees inclined to the substrate surface and their structural and electrical anisotrop y is predicated by the microstructure of (110)SrTiO3 single crystals o r STO buffer layers grown on YSZ/(100)Si substrates. (C) 1998 Elsevier Science Ltd. All rights reserved.