ALUMINUM NITRIDE THIN-FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

Authors
DIMITROVA V MANOVA D PASKOVA T UZUNOV T IVANOV N DECHEV D
Citation
V. Dimitrova et al., ALUMINUM NITRIDE THIN-FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING, Vacuum, 51(2), 1998, pp. 161-164
Citations number
17
Categorie Soggetti
Physics, Applied","Material Science
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
51
Issue
2
Year of publication
1998
Pages
161 - 164
Database
ISI
SICI code
0042-207X(1998)51:2<161:ANTDBD>2.0.ZU;2-W
Abstract
AlN-films prepared by de reactive magnetron sputtering. AlN in an Ar+N -2 gas mixture have been prepared and their microstructure, hardness, refractive index and IR transmittance examined. At lambda = 640 nm the refractive index was 1.93 and k = 3 x 10(-3); high transmission occur red between [??] structure and oxygen on microhardness is discussed. ( C) 1998 Elsevier Science Ltd. All rights reserved.