CHARACTERIZATION OF NITROGEN-DOPED AMORPHOUS-SILICON CARBIDE THIN-FILMS

Authors
SAFRANKOVA J HURAN J HOTOVY I KOBZEV AP KORENEV SA
Citation
J. Safrankova et al., CHARACTERIZATION OF NITROGEN-DOPED AMORPHOUS-SILICON CARBIDE THIN-FILMS, Vacuum, 51(2), 1998, pp. 165-167
Citations number
6
Categorie Soggetti
Physics, Applied","Material Science
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
51
Issue
2
Year of publication
1998
Pages
165 - 167
Database
ISI
SICI code
0042-207X(1998)51:2<165:CONACT>2.0.ZU;2-Q
Abstract
The properties of nitrogen-doped amorphous SiC films irradiated by pul se electron beams are presented with the I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates. The results showed that the film conductivity increased by about two orders of ma gnitude as the nitrogen fraction was increased from 70 to 14 at.%. The film conductivity was enhanced tenfold by a twofold increase in pulse electron beam irradiation. (C) 1998 Elsevier Science Ltd. All rights reserved.