The preparation of crystalline As-S films have been studied and some b
asic experimental conditions for epitaxial growth applied. Films were
deposited from As2S3 vacuum evaporated from a Ta-crucible on air cleav
ed NaCl single crystal and Ca-Na silicate glass. It was established th
at condensation of As2S3 on air-cleaved NaCl single crystals at very l
ow deposition rates resulted in thin films with a crystalline microstr
ucture. The composition of the crystalline phase differs from the stoi
chiometric As/S ratio and strongly depends on the film thickness, depo
sition rate, type and substrate temperature. From the results obtained
the importance is discusses' of the vacuum deposition conditions need
ed to prepare thin films with desired structural characteristics. (C)
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