ELECTRICAL CHARACTERIZATION OF DEFECTS INDUCED BY 12 MEV ELECTRONS INP-TYPE SI-SIO2 STRUCTURES

The effect of 12 MeV electron irradiation of p-type Si-SiO2 structures is studied by Deep Level Transient Spectroscopy (DLTS) measurements. The DLTS spectra of non-irradiated samples exhibit one peak only corre sponding to a deep level located in the forbidden gap at 0.56 eV above the valence band edge of the Si matrix. Four additional, shallower le vels are found in the spectra after bombardment with high-energy elect rons, whereas the peak intensity is dependent on the irradiation dose. The corresponding activation energy of the created defects, as well a s the density of the traps and the electron-capture cross sections are evaluated. (C) 1998 Elsevier Science Ltd All rights reserved.