J. Teichert et al., RES AND CHANNELING ANALYSIS OF COBALT DISILICIDE LAYERS PRODUCED BY FOCUSED ION-BEAM IMPLANTATION, Vacuum, 51(2), 1998, pp. 261-266
Cobalt disilicide layers were formed by ion beam synthesis using 35 ke
V Co+ focused ion beam (FIB) implantation into silicon. A strong influ
ence of the pixel dwell-time on the layer formation was found. Only fo
r short pixel dwell-times (about 1 mu s) closed layers with sufficient
quality for device application could be formed. To understand the dwe
ll-time effect the as-implanted samples were examined by Rutherford ba
ckscattering (RBS) and channeling analysis. A method is presented whic
h allows quantitative measurements of samples where the implanted area
s are smaller than the diameter of the RES beam. Evidence has been obt
ained that the silicon crystal damage is less for short dwell-times. (
C) 1998 Elsevier Science Ltd. AII rights reserved.