RES AND CHANNELING ANALYSIS OF COBALT DISILICIDE LAYERS PRODUCED BY FOCUSED ION-BEAM IMPLANTATION

Cobalt disilicide layers were formed by ion beam synthesis using 35 ke V Co+ focused ion beam (FIB) implantation into silicon. A strong influ ence of the pixel dwell-time on the layer formation was found. Only fo r short pixel dwell-times (about 1 mu s) closed layers with sufficient quality for device application could be formed. To understand the dwe ll-time effect the as-implanted samples were examined by Rutherford ba ckscattering (RBS) and channeling analysis. A method is presented whic h allows quantitative measurements of samples where the implanted area s are smaller than the diameter of the RES beam. Evidence has been obt ained that the silicon crystal damage is less for short dwell-times. ( C) 1998 Elsevier Science Ltd. AII rights reserved.