XPS STUDY OF AU-IRRADIATED A-AS2S3 LAYERS( ION)

The changes in the solubility of a-As2S3 evaporated layers under Au+ i on irradiation occur in a greater depth than the ion penetration range calculated by the TRIM program. An XPS analysis was made to elucidate the phenomenon. Surface and depth distributions of implanted ions, as well of As and S were examined and it was established that under impl antation the binding energy (BE) for the Au 4f(7/2) peak shifts by 0.6 5 eV when compared to the sputtered Au standard (83.9 eV). Increase in the concentration of implanted Au+ ions led to the appearance of peak s at both 84.55 and 85.35 eV. It was found out that the shift of BE of S 2p depended on the concentration of implanted Au+ ions, while the B E of As 3d was nearly the same. On the basis of these results the effe cts of Au irradiation are discussed. (C) 1998 Elsevier Science Ltd. Al l rights reserved.