The ion induced structural changes in evaporated layers of a-As2S3 und
er the action of Au+ ions with energies in the range of 6-19 keV and b
eam fluxes between 10(12) to 10(15) ions/cm(2) are studied. It is show
n that the solubility of the evaporated layers of As2S3 increases unde
r Au+ ions irradiation at a fluence up to 10(14) ions/cm(2) and decrea
ses at a fluence of more than 10(14) ions/cm(2). Thus, a positive or a
negative ion resists with high resolution can be developed depending
on the irradiation dose, ion-induced changes in the solubility of the
layers occur at a depth greater than the penetration range calculated
by the TRIM code of the Au+ ions. XPS study supports the TRIM results
and provides the data for understanding this phenomenon. (C) 1998 Else
vier Science Ltd. All rights reserved.