SURFACE ELECTRICAL-CONDUCTIVITY OF CO-IMPLANTED A-SIC-H FILMS()

Thin films of a-SiC:H were implanted with high doses of Co+ (D = 10(16 )-10(17) cm(-2)) with the objective of producing CoSi2 surface layers to enhance the surface electrical conductivity. Electrical measurement s and Rutherford backscattering analysis were used to determine the su rface properties of the implanted samples. High values of the conducti vity, increased by orders of magnitude were obtained from implantation and further improved by annealing procedures. The greatest changes we re observed at the highest dose, D = 10(17) cm(-2), with some sheet re sistivities reaching below 200-250 Omega/sq., corresponding to resisti vities of 600-700 mu Omega . cm. Up to 50% decrease in these values we re achieved through subsequent annealing treatments. (C) 1998 Elsevier Science Ltd. All rights reserved.