EFFECTS OF HIGH-DOSE BI- AN ATOMIC-FORCE AND TRANSMISSION ELECTRON-MICROSCOPY STUDY( IMPLANTATION ON SI )

The effect of bismuth ion implantation (dose range 10(15)-10(18) cm(-2 )) On the surface morphology of monocrystalline silicon was investigat ed by Atomic Force Microscopy (AFM) and Cross-Sectional Transmission E lectron Microscopy (XTEM) and the data obtained compared. The low leve ls of roughness observed at dose interval 10(15)-6 x 10(15) cm(-2) cou ld be related to an amorphous layer created at the target surface. Rou ghness increased at a dose of 8 x 10(15) cm(-2), where drastic changes in the morphology of the amorphous layer began, i.e. with nonepitaxia l recrystallization of Si and simultaneous agglomeration of Si in nano crystals. The maximum surface roughness at a dose 1 x 10(18) cm(-2) wa s related to the specific erosion of the surface in the form of hilloc ks connected to the extremely large value of the sputtering yield of B i (61.8 at. i.(-1)) in comparison with the sputtering yield of Si (3 a t. i.(-1)). (C) 1998 Elsevier Science Ltd All rights reserved.