REACTION OF SI(100) SURFACES WITH C2H4 - XPS AND LEED STUDIES

The reaction of double-domain Si(100)(2 x 1) surfaces exposed to low l evels of C2H4 was studied using X-ray photoelectron spectroscopy and l ow energy electron diffraction (LEED). The C 1s spectra from these exp osed Si surfaces could be separated into two components: the high bind ing energy component and the low binding energy component. The Si surf aces exposed at a sample temperature of 600 or 700 degrees C showed a c(4 x 4) LEED pattern. These results suggest that either CHx or CC bon ds were present on the Si(100) surface in addition to SIG. (C) 1998 El sevier Science B.V. All rights reserved.