STATIC AND DYNAMIC PERFORMANCE DEGRADATION OF CMOS BUFFERS DUE TO IONIZING-RADIATION

It has been known for some time that ionizing radiation has profound e ffects on integrated circuits. These need to be considered when such d evices may be subjected to radiation environments, such as in the spac e and nuclear industries. As even the space industry is making increas ed use of commercial off-the-shelf components for cost considerations, it is again becoming more important to characterize the degradation p rofiles of ICs which have not necessarily been radiation hardened. To that effect, the performance characteristics as functions of total dos e have been analyzed for Motorola MC14050B CMOS Hex buffers in order t o identify some relevant parameters. This paper presents the static (d c) and dynamic (ac) characteristics of these devices which have been s ubjected to increasing total doses under different bias conditions. (C ) 1998 Published by Elsevier Science Ltd. All rights reserved.