GROWTH-STUDIES OF THIN-FILMS OF BATIO3 USING FLASH EVAPORATION

A flash evaporation technique was implemented to grow polycrystalline thin films of BaTiO3 onto Si(100) substrates, which were prepared with protective layers of SiO2 or Pt/TiW. X-ray diffraction and X-ray phot oelectron spectroscopy studies of the films suggest the formation of B aTiO3 with good stoichiometry and with a tetragonal crystal structure phase for a given set of growth parameters. The inspection of the film s under scanning electron microscopy revealed that the topography and morphology depended strongly on the type of the protective layers. Gra in sizes smaller than 0.1 mu m were found for films deposited on the S iO2 layer and around I mu m for films on top Pt/TiW layers. Preliminar y studies of the dielectric properties of the films grown onto Pt/TiW show that the dielectric loss varied from 0.01 to 0.1 and the dielectr ic constant varied from 8 to 75 at I kHz. The electrical resistivity v aried from 10(12) to 10(13) Omega-cm and the breakdown electric field had values from 180 to 1000 kV/cm for these films. (C) 1998 Elsevier S cience Ltd. Ail rights reserved.