LOW-TEMPERATURE PHOTOLUMINESCENCE DETERMINATION OF DISLOCATION SLIP SYSTEMS IN CDSE SINGLE-CRYSTALS

Authors
Citation
Ni. Tarbaev, LOW-TEMPERATURE PHOTOLUMINESCENCE DETERMINATION OF DISLOCATION SLIP SYSTEMS IN CDSE SINGLE-CRYSTALS, Physics of the solid state, 40(10), 1998, pp. 1672-1675
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637834
Volume
40
Issue
10
Year of publication
1998
Pages
1672 - 1675
Database
ISI
SICI code
1063-7834(1998)40:10<1672:LPDODS>2.0.ZU;2-S
Abstract
The transformation of the low-temperature emission spectrum of cadmium selenide crystals during plastic deformation by a point load and by u niaxial compression is investigated. A one-to-one correspondence is es tablished between the occurrence of photoluminescence bands in the vic inity of 1.765 eV and the motion of dislocations in the prismatic slip system, on the one hand, and the emergence of a 1.792-eV band as a re sult of dislocation slip in the basal plane, on the other. (C) 1998 Am erican Institute of Physics. [S1063-7834(98)01610-4].