M. Jiang et al., ON THE CHEMOMECHANICAL POLISHING (CMP) OF SI3N4 BEARING BALLS WITH WATER-BASED CEO2 SLURRY, Journal of engineering materials and technology, 120(4), 1998, pp. 304-312
Among various abrasives investigated for the chemo-mechanical polishin
g (CMP) of Si3N4 balls (Jiang, 1998), cerium oxide (CeO2) was found to
be the most effective polishing medium (even superior to Cr2O3, Bhaga
vatula and Komanduri, 1996), yielding an extremely smooth and damage-f
ree surface with a finish R-a of approximate to 4 nm and R-t of approx
imate to 40 nm. In this investigation, the underlying reasons for the
superior finish with CeO2 were investigated. Various chemical reaction
s involved in CMP of Si3N4 balls with CeO2 were investigated (Gibbs fr
ee energy minimization) and a mechanism for the CMP is proposed. The t
wo important functions that CeO2 performs in the CMP of Si3N4 are: 1.
It participates directly in the chemical reaction (oxidization-reducti
on reaction) with Si3N4 workmaterial leading to the formation of a thi
n SiO2 layer, 2. The hardness of CeO2 is closer to that of the thin Si
O2 layer formed on Si3N4 but significantly lower than Si3N4 workmateri
al (approximate to 1/3). It can thus remove the brittle SiO2 reaction
product effectively, without damaging the Si3N4 substrate as no abrasi
on can take place by CeO2 on Si3N4. The kinetic action, which involves
the removal of the reaction products from the interface by subsequent
mechanical action of flowing water and CeO2 is critical to CMP. The c
hemical reaction could proceed on a continuing basis so long as the pa
ssivating layers are removed by the mechanical action at the same time
. CeO2 is found to be very effective in a water environment (hydrolysi
s) leading to the formation of additional SiO2 by reacting with Si3N4
thereby enhancing the CMP of Si3N4. Several similarities between polis
hing of Si3N4 and glass (SiO2) (Cook, 1990), including the polishing e
nvironment (CeO2 plus the magnetic fluid, pH value approximate to 6) a
nd the mechanism of polishing were observed. Also, after investigating
various reaction species in the CMP of Si3N4 with CeO2 and Cr2O3, the
former is found to be much safer from an environmental point of view
(Redy and Komanduri, 1998).