INTERFACE-RELATED BAND-BENDING EFFECTS ON INTERSUBBAND TRANSITIONS INDOPED GAAS ALXGA1-XAS SINGLE QUANTUM-WELLS/

We show that band-bending corrections related to the existence of nona brupt interfaces can change considerably the electron intersubband tra nsitions in modulation-doped GaAs/AlxGa1-xAs single quantum wells. In our calculations, the position-dependent electron effective mass in th e interface regions is taken into account, and the Poisson and Schrodi nger equations for the single quantum wells are solved self-consistent ly. When the doping density in the barriers is 3 x 10(18) cm(-3), we o btain that the first electron intersubband transition energy in a 100 Angstrom single GaAs/Al0.3Ga0.7As quantum well with nonabrupt interfac e widths of only 12 Angstrom is 16 meV higher than the one calculated for a similarly doped abrupt well.