H. Wang et al., INTERFACE-RELATED BAND-BENDING EFFECTS ON INTERSUBBAND TRANSITIONS INDOPED GAAS ALXGA1-XAS SINGLE QUANTUM-WELLS/, Journal of physics. Condensed matter (Print), 10(43), 1998, pp. 9681-9686
We show that band-bending corrections related to the existence of nona
brupt interfaces can change considerably the electron intersubband tra
nsitions in modulation-doped GaAs/AlxGa1-xAs single quantum wells. In
our calculations, the position-dependent electron effective mass in th
e interface regions is taken into account, and the Poisson and Schrodi
nger equations for the single quantum wells are solved self-consistent
ly. When the doping density in the barriers is 3 x 10(18) cm(-3), we o
btain that the first electron intersubband transition energy in a 100
Angstrom single GaAs/Al0.3Ga0.7As quantum well with nonabrupt interfac
e widths of only 12 Angstrom is 16 meV higher than the one calculated
for a similarly doped abrupt well.