SURFACE PHONON OBSERVED IN GAAS WIRE CRYSTALS GROWN ON POROUS SI

Authors
DASILVA SW GALZERANI JC LUBYSHEV DI BASMAJI P
Citation
Sw. Dasilva et al., SURFACE PHONON OBSERVED IN GAAS WIRE CRYSTALS GROWN ON POROUS SI, Journal of physics. Condensed matter (Print), 10(43), 1998, pp. 9687-9690
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter (Print) → ACNP
ISSN journal
09538984
Volume
10
Issue
43
Year of publication
1998
Pages
9687 - 9690
Database
ISI
SICI code
0953-8984(1998)10:43<9687:SPOIGW>2.0.ZU;2-8
Abstract
GaAs epitaxially grown on porous Si (PS) showed the presence of wires with typical diameters of 60 nm, and lengths in the range 6-10 mu m. T he Raman spectra of these samples were studied, and we focused attenti on on two additional modes appearing as 'shoulders' to the LO and TO G aAs lines. The former could be assigned to a surface phonon, and the l atter to the presence of As clusters.