HIGH-PERFORMANCE, RELIABLE, 730-NM-EMITTING AL-FREE ACTIVE-REGION DIODE-LASERS

Compressively strained InGaAsP quantum well (QW) active (lambda = 732 nm) diode lasers achieve 2.9 W continuous wave (cw) power from facet-c oated (4%/95%) 100-mu m-wide apertures, with reliable operation demons trated at 0.5 W cw power. A broad waveguide structure is used to obtai n a large transverse spot size (d/Gamma = 0.433 mu m), resulting in a low internal loss (alpha(i) similar to 2 cm(-1)) and narrow transverse far-field beam width (theta(1/2) = 38 degrees). Record-high character istic temperatures for the threshold current and the differential quan tum efficiency (T-0 = 115 K and T-1 = 285 K) are obtained by growing o n misoriented substrates. (C) 1998 American Institute of Physics. [S00 03-6951(98)00946-2].